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AOTF404 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOTF404/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. -RoHS Compliant -AOTF404L Halogen Free
Features
VDS (V) = 105V (VGS =10V) ID = 26 A RDS(ON) < 28 m (VGS =10V) RDS(ON) < 31 m (VGS = 6V) 100% UIS Tested!
TO-220FL
D
G G DS S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current
C
Maximum 105 25 26 18 90 5.8 4.5 37 68 43 21 2.2 1.38 -55 to 175
Units V V A
TC=25C TC=100C TA=25C TA=70C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG Symbol t 10s Steady-State Steady-State RJA RJC TC=25C
A A mJ W W C Max 12 58 3.5 Units C/W C/W C/W
Repetitive avalanche energy L=0.1mH C Power Dissipation B Power Dissipation
A
TC=100C TA=25C TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case B
Typ 10 48.5 2.9
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF404
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=6V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current 1630 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 142 51 0.65 30.8 VGS=10V, VDS=50V, ID=20A 6.4 8 VGS=10V, VDS=50V, RL=2.7, RGEN=3 IF=20A, dI/dt=500A/s 34 337 Conditions ID=10mA, VGS=0V VDS=105V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 2.5 90 21 39 23.5 73 0.72 1 55 2038 204 85 1.3 38.5 8 10 12.7 8.2 31.5 11.2 49 481 64 625 2445 265 119 1.95 46 9.6 14 28 47 31 3.2 Min 105 1 5 100 4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0: Otc. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 10V 80 6V 60 ID (A) ID(A) 15 125C 10 5V 20 VGS=4.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 30 Normalized On-Resistance 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 0 25 50 75 100 125 150 175 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=6V,20A VGS=10V, 20A 0 2 2.5 3 3.5 4 4.5 5 5 25C 20 VDS=5V 25
40
VGS(Volts) Figure 2: Transfer Characteristics
25 RDS(ON) (m)
VGS=6V
20
VGS=10V
15
10
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 ID=20A 50 125C RDS(ON) (m) IS (A) 40 1.0E+01 1.0E+02
125C 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 0.0 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.2 0.4 0.6 0.8 1.0 1.2 25C
30
20
10
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3 10 VDS=50V ID=20A Capacitance (nF) 2
8 VGS (Volts)
Ciss
6
4
1 Coss Crss
2
0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 100 RDS(ON) limited 100s 10
0 0 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 20 100
10s
300 TJ(Max)=175C TC=25C
ID (Amps)
1ms 10ms 1 TJ(Max)=175C, TA=25C 0.1 0.1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 1 DC
Power (W)
200
100
0 0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZJC Normalized Transient Thermal Resistance
1 0.1 0.01 0.001
D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=3.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD Ton Single Pulse
T
0.0001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
45 ID(A), Peak Avalanche Current 50 40 30
35 TA=25C TA=150C 25 TA=125C 15 0.000001 TA=100C
Power Dissipation (W) 0.001
20 10 0
0.00001
0.0001
0
25
50
75
100
125
150
175
Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability
TCASE (C) Figure 13: Power De-rating (Note B)
30 25 Current rating ID(A) 20 15 10 5 0 0 25 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note B) 50 175 Power (W)
100 80 60 40 20 0 0.01
TA=25C
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=58C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01 PD 0.001 Single Pulse Ton
T 100 1000
0.0001 0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF404
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg
DUT
VDC
+ Vdd Vgs
td(on) ton tr td(off) toff tf
90%
10%
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds EAR= 1/2 LIAR
2
BVDSS
VDC
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds Isd Vgs Ig
L
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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